Transparent conductive oxide ZnSnO₃ films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV–Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target–substrate separation. The average transmittance of the ZnSnO₃ films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO₃ films was in the range of 10⁻³–10⁻⁴ Ω cm. The structural, optical, and electrical properties of the ZnSnO₃ films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.