In order to demonstrate the control of BiFeO₃ thin film on the resistive switching effect and achieve the high-performance resistive switching device, the single layers and bilayer have been fabricated by chemical solution deposition method, respectively. In comparison with the single films, the composite film exhibits great performance of the resistive switching in endurance and repeatability, high stability and resistance ratio of high resistance state to low resistance state. Resistive switching effect in the BiFeO₃ composite structure demonstrates an effective way to improve the endurance and repeatability of the resistive switching characteristics by designing the relative devices.