series of Ta (4 nm)/ZnO (t nm)/Ni81Fe19 (20 nm)/ZnO (t nm)/Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni81Fe19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni81Fe19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni81Fe19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450u00b0C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni81Fe19 films with 2 nm ZnO layer can achieve 3.63% at 450u00b0C which is enhanced 11.6% compare with the films without ZnO layer.