Etching and sulfuring are equally important process during the surface sulfur passivation of gallium antimopnide (GaSb) In this work, we described the effects of etching by certain proportion of bromine methanol solution instead of hydrochloric acid solution (acidification), which could lead to a improvement of surface passivation homogeneity of GaSb. The photoluminescence (PL) spectra and the atomic force microscope (AFM) morphology on GaSb are also indicated a good surface morphology.