In this work, Al and Ga co-doped zinc oxide (AGZO) thin films were deposited on glass substrates by DC magnetron sputtering under different substrate temperatures. Evolutions of the structural, morphological, electrical and optical properties of the AGZO thin films as a function of substrate temperature were analyzed. Results showed that the average transmittance in the visible range (400–80002nm) for all the thin films was over 82%, which did not change obviously with the substrate temperature. The average grain size increased from 20.602nm to 51.402nm and the RMS surface roughness decreased from 21.102nm to 4.002nm with substrate temperatures ranging from 15002°C up to 45002°C. The carrier concentration, Hall mobility of the thin films increased when the substrate temperature was increased from 15002°C to 35002°C, and then decreased with a further increase of substrate temperature. The film deposited at 35002°C exhibited a lowest resistivity of 3.0×10 614 02Ω02cm with the highest carrier concentration of 5.0×10 20 02cm 613 and Hall mobility of 4202cm 2 02V 611 02s 611