In this paper, (NH4)2S and Na2S were used as passivating agent for the sulphuration treatment of GaSb. Although the oxide layer can be removed by both (NH4)2S and Na2S, the etching rate of Na2S was faster than (NH4)2S, which caused the high RMS. After passivation treatment, PL instensity of GaSb increased, however, if the passivation time was too long, PL instensity would decrease. At low temperature PL spectrum, the emission located at 777meV and 795meV which can be associated with the transition from the conduction band to the native acceptor level VGaGaSb and the other peak corresponds to bound-edge-related transitions can be observed.