NiO/BiFeO3 thin film has been deposited on Pt/Ti/SiO2/Si substrate by sol-gel method.The structure of thin film is analyzed by X-ray diffraction, and the result of X-ray diffraction shows that a perovskite crystal structure can be well-grown on Pt/Ti/SiO2/Si substrate. In addition, thensurface morphology is characterized by a scanning probe microscope, and the image of scanning probe microscope indicates a good crystalline quality of NiO/BFO thin film. Moreover, the current-voltage properties are also measured by a semiconductor characterization system, and the stable and reproducible nonvolatile resistive switching characteristic for the memory application have been clearly observed in Pt/NiO/BiFeO3/Pt structure, which could be attributed to the formation and rupture of filament localized in NiO thin layer.