This paper presents results for infrared transparent and conducting thin films based on In2O3. The films have been prepared by magnetrons sputtering equipment with different condition. Typical transmittance of 70%-80% with a film sheet resistance of 80-300惟/鈻 in the 3.5-5.0渭rn region has been achieved. Optically transparent and electrically conductive semiconductor Oxide films have been extensively studied in recent years. Such films have been prepared by various methods. In general, these films have high visible transmittance, but are opaque in the IR wavelength range of 1-12渭m IR transmission. The infrared transparent and electrically conductive thin films are useful in certain important applications. For example, these films can be use as antistatic coatings, and while permitting a reasonable transmission coefficient for IR. Another obvious application is to serve as the conducting electrode for various optical devices where good infrared transmission is important. So, it is important to research indium oxide base infrared (3-5 um) transparent conduction thin films. It has been developed that preparation condition influence on properties of thin films. Such as the sputtering time, and pressure, and power, and the substrate temperature, had great influence on the crystal structure, optical and electrical properties of In2O3-based thin films. The In2O3-based thin films obtained were characterized and analyzed by X-ray Diffractometer (XRD), Atomic Force Microscope (AFM), Vander Pauw Method and Fourier Transform Infrared Spectroscopy (FTIR).